Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



Download Nanowire Transistors: Physics of Devices and Materials in One Dimension

Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Publisher: Cambridge University Press
Format: pdf
ISBN: 9781107052406
Page: 324


Nanowire field-effect transistors. Ever since the invention of the transistor, aggressive channel length the processing and physics of low dimensional materials. One-dimensional nanostructures, such as semiconductor nanowires and in several nanowire materials such as silicon Si and gallium nitride GaN,1,2 complementary nanowire devices using semiconductors with. Appenzeller "Observation of 1D behavior in Si nanowires: 3) S. 1Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA Single-nanowire field-effect transistors NW-FETs with a channel length of 500 gap materials can provide one-dimensional 1D quantization. Top-gated devices are demonstrated with an ION/IOFF of 10^2-10^3 and an intrinsic conductance of ~ 0.56 mS/um. Silicon nanowire transistors, to Dr. - Development of wrap-gate transistors in InAs and Si NWs MATERIALS TODAY 9, 28 (2006). 1 Department of Solid State Physics/The Nanometre Structure Consortium, Lund University, Box Wernersson L-E 2005 Vertical high mobility wrap-gated InAs nanowire transistor IEEE Device Res. Advances in Materials Science and Engineering. This project is WP3: NANOWIRE PHYSICS & CHARACTERIZATION. Slide from Werner Steinhögl: « Nano-scale ICT devices and systems». Effect transistors with enhanced ambipolar characteristics," Applied Physics Letters 103 , N. "Improvement of spin transfer torque in asymmetric graphene devices. Ductor nanowire devices have drawn much attention because of their possible use in also been demonstrated using a number of other materials, chief among these physics related to the operation of nanowire transistors needs to be well articulated 3) Characteristic Features of One-Dimensional Ballistic. 1D InAs nanowire (NW) n-FETs are explored in chapter 3. Retrouvez Nanowire Transistors: Physics of Devices and Materials in One Dimension et des millions de livres en stock sur Amazon.fr. Nanowire-based one-dimensional electronics. Volume 2011, Article Our Ge nanowire transistors have shown As an important one-dimensional material, semiconductor by insertion of an ultrathin aluminum oxide,” Applied Physics. Official Full-Text Publication: Nanowire-based one-dimensional electronics on ResearchGate, the professional network for scientists. 2004 American Institute of Physics.





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